parameter l value unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current i c 13.0 a base current i b 6.0 a total dissipation at p tot 110 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c MJE13010A description parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v ce =700v, i e =0 1.0 ma emitter cut-off current i ebo v eb =9v, i c =0 1.0 ma collector-emitter sustaining voltage v ceo i c =10ma, i b =0 400 v dc current gain h fe(1) v ce =5v, i c =5.0a 8 40 h fe(2) v ce =5v, i c =8.0a 6 30 collector-emitter saturation voltage v ce(sat) i c =12a,i b =3.0a 3.0 v i c =8.0a,i b =1.6a 1.5 base-emitter saturation voltage v be(sat) i c =8.0a,i b =1.6a 1.6 v current gain bandwidth product f t v ce =10v, i c =0.5a,f=1mhz 4 mhz output capacitance c ob v cb =10v,i e =0,f=0.1mhz 180 pf turn off time t s i b1 =-i b2 =1.6a,t p =25 s 1.7 4.0 us silicon npn power transistor product specification silicon npn, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-3pn tiger electronic co.,ltd
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